Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods

Energy Position of the Active Near-Interface Traps in Metal–Oxide– Semiconductor Field-Effect Transistors on 4H–SiC

Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

Al2O3 films with different thicknesses have been deposited on n-type nitrogen-doped 4H-SiC 0001 epitaxial samples by atomic layer chemical vapor deposition at 300 °C and subsequently annealed in Ar atmosphere at temperatures up to 1000 °C. The Al2O3/4H-SiC structures were analyzed by x-ray photoelectron spectroscopy XPS , secondary ion mass spectrometry SIMS , and transmission electron microsco...

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part...

Physical and electrical characterizations of metal-oxide-semiconductor capacitors

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

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